rocking curve meaning in Chinese
摇摆曲线
Examples
- Dynamic simulation of rocking curve for semiconductor film and epitaxal material
半导体薄膜及外延层材料摇摆曲线的动态模拟 - With optimized buffer layer growth parameters , gan epilayer with improved quality has been grown , whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin
以优化的缓冲层生长条件得到质量有明显改善的gan外延层， gan薄膜的( 0002 )面双晶dc - xrd扫描的半高宽为6arcmin 。 - The properties of thin films have been investigated with modern analysis technique , such as afm ( atom force microscopy ) , sem ( scanning electron microscope ) , xrd ( x - ray diffraction ) and rocking curve ( - scan ) . and the properties of ybco thin film and its substrate and deposition temperature have been analysed , comparing with lao substrate ' s crystallization quality , ybco thin film properties , such as morphology and degree of grain alignment , was concluded to correlate with the crystal orientation uniform of lao substrate as revealed by xrd
本文结合afm 、 sem研究ybco薄膜的表面形貌， xrd 、 fwhm分析薄膜的结晶情况，并结合成膜温度和基片的质量进行一系列结构与性能的对比研究，发现laalo3 （ lao ）基片的质量对ybco薄膜的结构完整性有很大影响，不仅影响了薄膜的c轴取向性，而且影响了ybco的超导性能。 - In addtion , the growth rate of low temperature insb buffer layer was 0 . 26 m / h , which was obtained by rheed intensity oscillation curves . growth temperature of insb epilayers were investigated with sem and dcxrd , and it was found that the optimum temperature was 440 . a 2 . 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec , the strain relaxtion was about 99 . 02 %
通过扫描电镜形貌观察与能谱分析发现:温度较低时sb的表面迁移率低,容易在表面堆积;结合x射线双晶衍射分析,确定高温insb外延生长的最佳衬底温度为440 ,该温度下生长2 . 1 m的样品x射线半高峰宽为412 ,应变弛豫99 . 02 % 。 - The microstructure morphology , the concentration , the infrared transmittance , and the x - ray rocking curves measured showed that a long single crystal part and axial steadily distributed zone of the concentration existed in the as - grown crystals . the radial concentration distribution has relatively high uniformity
通过观察生长态晶体中的微观组织形貌，并测量晶体轴向和径向上不同位置处的成分、红外透过率和x射线回摆曲线，发现晶内有较长的单晶段和轴向成分稳定区。